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FAIRCHILD - IRF 630 MOSFET 9A 200V TO-220
FAIRCHILD - IRF 630 MOSFET 9A 200V TO-220 Fairchild Selangor, Penang, Malaysia, Kuala Lumpur (KL), Petaling Jaya (PJ), Butterworth Supplier, Suppliers, Supply, Supplies | MOBICON-REMOTE ELECTRONIC SDN BHD
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Product Overview
The IRF630, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
  • Drain to source voltage (Vds) is 200V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) is 9A
  • Power dissipation (Pd) is 75W
  • Operating junction temperature range from -65°C to 150°C
  • Gate threshold voltage of 3V
  • Low on state resistance of 350mohm at Vgs 10V

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial


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